dm n10h 22 0 l e document number: ds 36475 rev. 3 - 2 1 of 7 www.diodes.com april 2015 ? diodes incorporated dm n10h 22 0 l e new product 100v n - channel enhancement mode mosfet product summary v (br)dss r ds(on) max i d t a = + 25 c 10 0 v 22 0 m ? @ v gs = 10 v 2.3 a 25 0 m ? @ v gs = 4.5 v 2.1 a description this new generation mosfet is designed to minimize the on - state resista nce (r ds(on ) ) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. applications ? dc - dc converters ? power m anagement f unctions features and benefits ? low on - resistance ? low input capacitance ? fast switching speed ? low input/output leakage ? totally lead - free & fully rohs c ompliant (note s 1 & 2 ) ? halogen and antimony free. green device (note ? qualified to aec - q101 standards for high reliability mechanical data ? case: sot223 ? case material: molded pla stic, green molding compound ; ul flammability clas sification rating 94v - 0 ? moisture sensitivity: level 1 per j - std - 020 ? terminals connections: see d iagram b elow ? terminals: finish - matte tin a nnealed over copper l ead frame ; solderable per mil - std - 202, method 208 ? weight: 0.112 grams ( a pproximate) ordering information (note 4 ) part number compliance case packaging dm n10h 22 0l e - 13 standard sot223 2,5 00 /tape & reel note s: 1 . no purposely added lead. fully eu directive 200 2/95/ec (rohs) & 2011/65/eu (rohs 2) compliant. 2. see http://www.diodes.com/quality/lead_free.html for more information about diodes incorporateds definitions of hal ogen - and antimony - free, "green" and lead - f ree . 3. halogen - and antimony - free "gre en products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4 . for packaging det ails, go to our website at http://www.diodes.com/products/packages.html . marking in formation t op view sot 2 2 3 equivalent circuit 10h 22 0 yww pin out - top view = manufacturers marking d s g
dm n10h 22 0 l e document number: ds 36475 rev. 3 - 2 2 of 7 www.diodes.com april 2015 ? diodes incorporated dm n10h 22 0 l e new product maximum ratings (@ t a = +25c, unless otherwise specified.) characteristic symbol value units drain - source voltage v dss 10 0 v gate - source voltage v gss ? gs = 10 v t a = +25c t a = +70 c i d 2.3 1.8 a t c = +25c t c = +70c i d 6.2 4. 9 a maximum continuous body diode f orward current (note 5 ) i s 1.5 a pulsed drain current ( 10 dm 8 a thermal characteristics (@ t a = +25c, unless otherwise specified.) char acteristic symbol value units total power dissipation (note 5 ) t a = +25c p d 1.8 w t a = + 70 c 1.1 thermal resistance, junction to ambient (note 5 ) r ? ja 69 c/w total power dissipation (note 5 ) t c = +25c p d 14 w thermal resistance, junction to case (note 5 ) r ? j c 8. 7 c/w operating and storage temperature range t j, t stg - 55 to +150 c electrical characteristics (@ t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 6 ) drain - so urce breakdown voltage bv dss 100 gs = 0v, i d = 250a zero gate voltage drain current i dss 1 a v ds = 100 v, v gs = 0v gate - source leakage i gss 10 0 na v gs = ? ds = 0v on characteristics (note 6 ) gate threshold voltage v gs(t h) 1 1.7 2.5 v v ds = v gs , i d = 250a static drain - source on - resistance r ds(on) 155 220 m? gs = 10 v, i d = 1.6 a 190 250 v gs = 4.5 v, i d = 1.3 a diode forward voltage v sd 0.8 1.5 v v gs = 0v, i s = 1.1 a dynamic characteristics (note 7 ) input ca pacitance c iss 401 pf v ds = 25 v, v gs = 0v f = 1.0mhz output capacitance c oss 22 reverse transfer capacitance c rss 17 gate resistnace r g 2.1 ? ds = 0v, v gs = 0v, f = 1.0mhz total gate charge ( v gs = 4.5 v ) q g 4.1 nc v ds = 50 v, i d = 1.6 a total gate charge ( v gs = 10 v ) q g 8.3 gate - source charge q gs 1.5 gate - drain charge q gd 2 turn - on delay time t d(on) 6.8 ns v ds = 50 v, v gs = 4.5 v, r g = 6.8 ? ?? d = 1.0 a turn - on rise time t r 8.2 turn - off delay time t d(o ff) 7.9 turn - off fall time t f 3.6 reverse recovery time t rr 17 ns i s = 1.1 a, di/dt =100a/ ? rr 9.8 nc notes: 5 . device mounted on fr - 4 substrate pc board, 2oz copper, with thermal vias to bottom layer 1 - inc h square copper plate . 6 . short duration pulse test used to minimize self - heating effect. 7 . guaranteed by design. not subject to production testing.
dm n10h 22 0 l e document number: ds 36475 rev. 3 - 2 3 of 7 www.diodes.com april 2015 ? diodes incorporated dm n10h 22 0 l e new product v , drain-source voltage (v) figure 1 typical output characteristic ds i , d r a i n c u r r e n t ( a ) d 0 1 2 3 4 5 6 7 8 9 10 0 0.5 1 1.5 2 2.5 3 v = 3.5v gs v = 4.0v gs v = 8.0v gs v = 10v gs v = 4.5v gs v = 5.0v gs v , gate-source voltage (v) gs figure 2 typical transfer characteristics i , d r a i n c u r r e n t ( a ) d 0 1 2 3 4 5 6 7 8 9 10 1 2 3 4 5 6 7 8 v = 10v ds t = 150c a t = 125c a t = 85c a t = 25c a t = -55c a i , drain-source current (a) d figure 3 typical on-resistance vs. drain current and gate voltage r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0 1 2 3 4 5 6 7 8 9 10 v = 4.5v gs v = 10v gs 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 2 4 6 8 10 12 14 16 18 20 r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? v , gate-source current (a) gs figure 4 typical transfer characteristic i = 1.3a d i = 1.6a d i , drain current (a) d figure 5 typical on-resistance vs. drain current and temperature r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? 0.00 0.10 0.20 0.30 0.40 0.50 0.60 0.70 0 1 2 3 4 5 6 7 8 9 10 t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a v = 10v gs t , junction temperature ( c) figure 6 on-resistance variation with temperature j ? r , d r a i n - s o u r c e o n - r e s i s t a n c e ( n o r m a l i z e d ) d s ( o n ) 0 0.5 1 1.5 2 2.5 3 -50 -25 0 25 50 75 100 125 150 v = 4.5v i = 1a gs d v = v i = 2a gs d 10
dm n10h 22 0 l e document number: ds 36475 rev. 3 - 2 4 of 7 www.diodes.com april 2015 ? diodes incorporated dm n10h 22 0 l e new product t , junction temperature ( c) figure 7 on-resistance variation with temperature j ? r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? 0 0.1 0.2 0.3 0.4 0.5 -50 -25 0 25 50 75 100 125 150 v = 4.5v i = 1a gs d v = v i = 2a gs d 10 t , junction temperature ( c) figure 8 gate threshold variation vs. ambient temperature j ? v , g a t e t h r e s h o l d v o l t a g e ( v ) g s ( t h ) 1 1.3 1.6 1.9 2.2 2.5 -50 -25 0 25 50 75 100 125 150 i = 1ma d i = 250a d v , source-drain voltage (v) sd figure 9 diode forward voltage vs. current i , s o u r c e c u r r e n t ( a ) s t = 125c a 0 1 2 3 4 5 6 7 8 9 10 0 0.3 0.6 0.9 1.2 1.5 t = 150c a t = 85c a t = -55c a t = 25c a v , drain-source voltage (v) ds figure 10 typical junction capacitance c , j u n c t i o n c a p a c i t a n c e ( p f ) t 10 100 1000 0 5 10 15 20 25 30 35 40 f = 1mhz c iss c oss c rss q (nc) g , total gate charge figure 11 gate charge v g a t e t h r e s h o l d v o l t a g e ( v ) g s 0 2 4 6 8 10 0 2 4 6 8 10 v = 50v i = a ds d 1.6 v , drain-source voltage (v) figure 12 soa, safe operation area ds i , d r a i n c u r r e n t ( a ) d r limited ds(on) 0.001 0.01 0.1 1 10 0.1 1 10 100 1000 t = 150c t = 25c j(max) a v = 10v single pulse gs dut on 1 * mrp board dc p = 10s w p = 1s w p = 100ms w p = 10ms w p = 1ms w p = 100s w
dm n10h 22 0 l e document number: ds 36475 rev. 3 - 2 5 of 7 www.diodes.com april 2015 ? diodes incorporated dm n10h 22 0 l e new product t1, pulse duration time (sec) figure 13 transient thermal resistance r ( t ) , t r a n s i e n t t h e r m a l r e s i s t a n c e d = 0.5 d = 0.7 d = 0.9 d = 0.3 d = 0.1 d = 0.05 d = 0.02 d = 0.01 d = 0.005 d = single pulse r (t) = r(t) * r r = 99c/w duty cycle, d = t1/ t2 ?? ? ja ja ja 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000
dm n10h 22 0 l e document number: ds 36475 rev. 3 - 2 6 of 7 www.diodes.com april 2015 ? diodes incorporated dm n10h 22 0 l e new product package outline dimensions please see ap02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. suggested pad layout please see ap02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. sot223 dim min max typ a 1.55 1.65 1.60 a1 0.010 0.15 0.05 b 0.60 0.80 0.70 b1 2.90 3.10 3.00 c 0.20 0.30 0.25 d 6.45 6.55 6.50 e 3.45 3.55 3 .50 e1 6.90 7.10 7.00 e - - 4.60 e1 - - 2.30 l 0.85 1.05 0.95 q 0.84 0.94 0.89 all dimensions in mm dimensions value (in mm) c 2.30 c1 6.40 x 1.20 x1 3.30 y 1.60 y1 1.60 y2 8.00 a1 a 7 7 d b e e1 b1 c e1 l 0-10 q e 0.25 seating plane gauge plane x1 y1 y x c c1 y2
dm n10h 22 0 l e document number: ds 36475 rev. 3 - 2 7 of 7 www.diodes.com april 2015 ? diodes incorporated dm n10h 22 0 l e new product important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their e quivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. diodes incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license unde r its patent or trademark rights, nor the rights of ot hers. any customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diod es incorporated website , harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthor ized sales channel. should customers purchase or use diodes incorporated products for any uninte nded or unauthorized application, customers shall indemnify and hold diodes incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising ou t of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product nam es and markings noted herein may also be covered by one or more unit ed states, international or foreign trademarks. this document is written in english but may be translated into multiple languages for reference. only the english version of this document is the final and determinative format released by diodes incorporated. life support diodes incorporated products a re specifically not authorized for use as critical components in life support devices or systems without the express written approval of the chief executive officer of diodes incorporated. as used herein: a. life support devices or systems are devices o r systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided i n the labeling can be reasonably expected to result in signif icant injury to the user. b. a critical component is any component in a life support device or system whose failure to perform can be reasonably expe cted to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support d evices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety - related requirem ents concerning their products and any use of diodes incorporated products in such safety - critical, life support devices or systems, notwithstanding any devices - or systems - related information or support that may be provided by diodes incorporated. furthe r, customers must fully indemnify diodes incorporated and its representatives against any damages arising out of the use of diodes incorporated products in such safety - critical, life support devices or systems. copyright ? 2015 , diodes incorporated w ww.diodes.com
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